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Ordering number : EN8759
EMH2314
P-Channel Power MOSFET
–12V, –5A, 37m Ω , Single EMH8
Features
http://onsemi.com
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?
?
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ON-resistance RDS(on)1=28m Ω (typ.)
1.8V drive
Halogen free compliance
Protection Diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--12
±10
--5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--20
1.0
1.2
150
--55 to +150
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-002
Product & Package Information
? Package : EMH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
8
0.2
5
0.125
EMH2314-TL-H
Taping Type : TL
Marking
MP
TL
LOT No.
1
0.5
4
2.0
1 : Source1
2 : Gate1
Electrical Connection
3 : Source2
8
7
6
5
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
EMH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
51612PE TKIM TC-00002667 No.8759-1/7
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